PP9585 Insulated gate bipolar transistor IGBT Fuji 2DI50Z-100 99E1820 Cost efficiency: Thanks to the

Cost efficiency: Thanks to the reuse of tested components

Robuste Bauweise: Hergestellt aus strapazierfähigen Materialien

Technical specifications: Supports a wide range of input and output options that can be adapted to specific needs

um Ihre industriellen Anwendungen sicherer zu gestalten

PP9585 Insulated gate bipolar transistor IGBT Fuji 2DI50Z-100 99E1820 Cost efficiency: Thanks to theThe PP9585 Insulated Gate Bipolar Transistor (IGBT) Fuji 2DI50Z 100 is a reliable choice for industrial applications. This used module comes from the breakdown of a motor controller and was in full company until dismantling. The IGBT offers excellent performance and efficiency, ideal for applications in power electronics. High performance: With a maximum current of 50a and a voltage strength of up to 1000V, this module is suitable for demanding